High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology.

• Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations


• Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability


• Provides a broad overview of the topic, from materials integration to circuits