To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
- ISBN:
- 9781605111285
- 9781605111285
-
Category:
- Materials science
- Format:
- Hardback
- Publication Date:
-
19-11-2009
- Language:
- English
- Publisher:
- Materials Research Society
- Country of origin:
- United States
- Pages:
- 194
- Dimensions (mm):
- 236x160x14mm
- Weight:
- 0.43kg
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