Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:
Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
Includes exercise problems at the end of each chapter and extensive references at the end of the book
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
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