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Ferroelectric Random Access Memories

Ferroelectric Random Access Memories

Fundamentals and Applications

by Masanori OkuyamaHiroshi Ishiwara and Yoshihiro Arimoto
Hardback
Publication Date: 16/04/2004

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In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.
ISBN:
9783540407188
9783540407188
Category:
Storage media & peripherals
Format:
Hardback
Publication Date:
16-04-2004
Language:
English
Publisher:
Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Country of origin:
Germany
Pages:
291
Dimensions (mm):
235x155x19mm
Weight:
1.35kg

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