This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
- ISBN:
- 9789811351815
- 9789811351815
-
Category:
- Electronic devices & materials
- Format:
- Paperback
- Publication Date:
-
04-01-2019
- Language:
- English
- Publisher:
- Springer
- Country of origin:
- United States
- Dimensions (mm):
- 235x155mm
- Weight:
- 0.45kg
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