The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.

Features

• Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.


• Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.


• Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.


• Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.

The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.